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A new pyramidal structural defect, 5 to 8 micron wide, has been discovered inthin films of epitaxial erbium disilicide formed by annealing thin Er films onSi(001) substrates at temperatures of 500 to 800C. Since these defects formeven upon annealing in vacuum of TiN-capped films their formation is not due tooxidation. The pyramidal defects are absent when the erbium disilicide forms onamorphous substrates, which suggests that epitaxial strains play an importantrole in their formation. We propose that these defects form as a result of theseparation of the silicide film from the substrate and its buckling in order torelieve the compressive, biaxial epitaxial stresses. Silicon can then diffusethrough the silicide or along the interface to fully or partially fill the voidbetween the buckled erbium disilicide film and the substrate.Comment: 14 pages, 5 figures. Submitted to Applied Physics Letter

Pyramidal structural defects in erbium silicide thin films