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The controlled depletion of electrons in semiconductors is the basis fornumerous devices. Reactive-ion etching provides an effective technique forfabricating both classical and quantum devices. However, Fermi level pinningcan occur, and must be carefully considered in the development of smalldevices, such as quantum dots. Because of depletion, the electrical size of thedevice is reduced in comparison with its physical dimension. To investigatethis issue, we fabricate several types of devices in silicon-germaniumheterostructures using two different etches, CF$_4$ and SF$_6$. We estimate thedepletion width associated with each etch by two methods: (i) conductancemeasurements in etched wires of decreasing thickness (to determine the onset ofdepletion), (ii) capacitance measurements of quantum dots (to estimate the sizeof the active region). We find that the SF$_6$ etch causes a much smallerdepletion width, making it more suitable for device fabrication.Comment: 7 pages, 10 figure

Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas