English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A modified model of metal-semiconductor contacts is applied to analyze thecapacitance-voltage and current-voltage characteristics ofmetal-ferroelectric-metal structures. The ferroelectric polarization isconsidered as a sheet of surface charge situated at a fixed distance from theinterface. The presumable high concentration of structural defects acting asactive electric traps is taken into account by introducing a deep acceptor-likelevel. The model is applied on a set of metal-PZT--metal samples with differentZr/Ti ratios, deposited by different methods, and having different thickness,electrode materials, and electrode areas. The concentration of the freecarriers, the fixed charge density in the depletion region, the distancebetween polarization charge and the physical interface, the potential barrierwere estimated.

journal of applied physics

Metal-ferroelectric-metal structures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films