English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The large tunneling anisotropic magneto-resistance of a single$p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in aperpendicular magnetic field over a large temperature and voltage range. Underan applied bias, the tunnel junction transparency is modified, allowing tocontinuously tune anisotropic transport properties between the tunneling andthe ohmic regimes. Furthermore, an asymmetric bias-dependence of theanisotropic tunneling magneto-resistance is also observed: a reverse biashighlights the full (Ga,Mn)As valence band states contribution, whereas aforward bias only probes part of the density of states and reveals oppositecontributions from two subbands.Comment: 11 pages, 3 figure

Voltage-controlled tunneling anisotropic magnetoresistance of a ferromagnetic p++-(Ga,Mn)As∕n+-GaAs Zener-Esaki diode