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Ferroelectric films in the paraelectric phase exhibit two undesirableproperties: hysteresis in the voltage-capacitance characteristics and asignificant relaxation time of the capacitance. Our experiments show thatsuppression of both of these is achieved by using ultraviolet (UV) radiationwith wavelengths corresponding to the material forbidden gap. Experimentally wealso observed UV radiation induced modulation of thin film permittivity withoutan applied electric field. The observed phenomena are believed to have the sameorigin: UV light causes generation of non-equilibrium charge carriers and spacecharge redistribution inside thin ferroelectric films.Comment: 7 pages, 3 figures, submitted to Applied Physics Letter

Enhanced electrical properties of ferroelectric thin films by ultraviolet radiation