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We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind Alx Ga1-x NGaN -based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 μm diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 AW at 254 nm, and a NEP of 1.89x 10-16 W Hz12. © 2005 American Institute of Physics

Solar-blind AlxGa1−xN-based avalanche photodiodes