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We demonstrate a contact design that allows four-terminal magnetotransportmeasurements of cleaved-edge overgrown two-dimensional electron and holesystems. By lithographically patterning and etching a bulk-doped surface layer,finger-shaped leads are fabricated, which contact the two-dimensional systemson the cleave facet. Both n- and p-type two-dimensional systems aredemonstrated at the cleaved edge, using Si as either donor or acceptor,dependent on the growth conditions. Four-point measurements of both gated andmodulation-doped samples yield fractional quantum Hall features for both n- andp-type, with several higher-order fractions evident in n-type modulation-dopedsamples.Comment: 3 pages, 3 figure

Four-point measurements of n- and p-type two-dimensional systems fabricated with cleaved-edge overgrowth