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We describe a technique to fabricate closely spaced electron-hole bilayers inGaAs-AlGaAs heterostructures. Our technique incorporates a novel method formaking shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensionalelectron gas (2DEG) that do not require annealing. Four terminal measurementson both layers (25nm apart) are possible. Measurements show a hole mobility$\mu_{h}>10^{5}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ and an electron mobility$\mu_{e}>10^{6}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ at 1.5K. Preliminary dragmeasurements made down to T=300mK indicate an enhancement of coulombinteraction over the values obtained from a static Random Phase Approximation(RPA) calculation.

Fabrication of closely spaced, independently contacted electron-hole bilayers in GaAs-AlGaAs heterostructures