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A simple and most promising oxide-assisted catalyst-free method is used toprepare silicon nitride nanowires that give rise to high yield in a short time.After a brief analysis of the state of the art, we reveal the crucial roleplayed by the oxygen partial pressure: when oxygen partial pressure is slightlybelow the threshold of passive oxidation, a high yield inhibiting the formationof any silica layer covering the nanowires occurs and thanks to the synthesistemperature one can control nanowire dimensions.

Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation