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Transport peculiarities and the physical origin of noise properties in AlGaN/GaN-based high electron mobility transistors (HEMTs) with a large ratio of channel length to gate length were investigated. Dependence of deviations of low-frequency noise spectra from the 1/f law on applied gate voltages was studied in an extended range of frequencies. The behavior is explained in terms of a model based on the dynamic redistribution of the electric field along the two-dimensional channel of the HEMT. The results show that the main contribution to the noise originates from the region under the gate and adjacent to the gate channel regions. (C) 2005 American Institute of Physics

Dynamic redistribution of the electric field of the channel in AlGaN∕GaN high electron mobility transistor with nanometer-scale gate length