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In this work, we study random telegraph signal (RTS) noise in metal-oxide-semiconductor field effect transistors when the device is periodically and rapidly cycled between an "on" and an "off" bias state. We derive the effective RTS time constants for this case using Shockley–Read–Hall statistics applied under transient conditions. In this way, we show that the oft-observed reduction in RTS noise under such bias conditions can be explained by a nonuniform (e.g., U-shaped) distribution in energy of interface traps

Relating random telegraph signal noise in metal-oxide-semiconductor transistors to interface trap energy distribution