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We have applied double p-type amorphous silicon-carbide (p-a-SiC:H) layer structures to pin-type protocrystalline silicon (pc-Si:H) multilayer solar cells. The less-pronounced initial short-wavelength quantum efficiency variation against the biased voltage and the wide overlap of dark current—voltage (JD-V) and short-circuit current—open-circuit voltage (Jsc-Voc) characteristics prove that the double p-a-SiC:H layer structure successfully reduces recombination at the p∕i interface. Therefore, we achieved highly stabilized efficiency of 9.0% without any backreflector.

Double amorphous silicon-carbide p-layer structures producing highly stabilized pin-type protocrystalline silicon multilayer solar cells