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We studied the dependence of carrier mobility on grain mosaic spread for ⟨001⟩-oriented, 200-to-400-nm-thick Si thin films grown on polycrystalline metal substrates. The Hall mobility increased from 1% to 23% of that in bulk single-crystal Si with decreasing grain mosaic spread from 14° to 2°. For the same range of parameters, a model combining intragrain and grain boundary scattering yielded a decrease of the energy barrier height from 0.1eV to less than 10−3eV and an accompanying decrease of trap density from 6×1011cm−2 to less than 3×1010cm−2. These results demonstrate that, for polycrystalline Si films, improving the intergrain alignment is an effective and practical alternative to increasing the grain size to achieve enhanced mobility.

Dependence of carrier mobility on grain mosaic spread in ⟨001⟩-oriented Si films grown on polycrystalline substrates