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Using single-crystal organic field-effect transistors with the conductionchannel exposed to environmental agents we have observed generation ofelectronic defects at the organic surface in the high-vacuum environment. Rapiddecrease of the source-drain current of an operating device is observed uponexposure of the channel to the species generated by high-vacuum gauges. Weattribute this effect to interaction of the organic surface with electricallyneutral free radicals produced in the process of hydrocarbon cracking on hotfilaments with a relatively low activation energy Ea ~ 2.5 eV (240 kJ/mol). Thereported results might be important for optimizing the high-vacuum processes offabrication and characterization of a wide range of organic and molecularelectronic devices.Comment: submitted to Appl. Phys. Let

Interaction of organic surfaces with active species in the high-vacuum environment