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A 2D quantum ballistic transport model based on the non-equilibrium Green'sfunction formalism has been used to theoretically investigate the effectsinduced by an oxide crenel in a very short (7 nm) thin-filmmetal-oxide-semiconductor-field-effect-transistor. Our investigation shows thata well adjusted crenel permits an improvement of on-off current ratio Ion/Ioffof about 244% with no detrimental change in the drive current Ion. Thisremarkable result is explained by a nontrivial influence of crenel onconduction band-structure in thin-film. Therefore a well optimized crenel seemsto be a good solution to have a much better control of short channel effects intransistor where the transport has a strong quantum behavior

Improvement of current-control induced by oxide notch in very short field-effect transistor