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We have investigated the transport and magnetization characteristics ofGa1-xMnxAs intentionally compensated with shallow Te donors. Using ionimplantation followed by pulsed-laser melting, we vary the Te compensation anddrive the system through a metal-insulator transition (MIT). This MIT isassociated with enhanced low-temperature magnetization and an evolution fromconcave to convex temperature-dependent magnetization.Comment: 2 pages, 2 figures. To appear in the proceedings of the 27th  International Conference on the Physics of Semiconductors (ICPS-27,  Flagstaff, AZ, July 26-30, 2004

Carrier Concentration Dependencies of Magnetization & Transport in Ga1−xMnxAs1−yTey