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Utilizing a novel carbon doping source, we prepared two-dimensional holegases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem.Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electronsystems, the hole mobility sensitively depends on variations of the quantumwell width and the spacer thickness. In particular an increase of the quantumwell width from an optimal value of 15 nm to 18 nm is accompanied by a 35 %reduction of the hole mobility. The quality of ultrahigh-mobility electronsystems is not affected by the employed carbon doping source

Carbon-doped symmetric GaAs∕AlGaAs quantum wells with hole mobilities beyond 106cm2∕Vs