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We report scanning tunneling microscopy and ballistic electron emissionmicroscopy studies of the electronic states of the uncovered andchemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These stateschange when chemisorbed oxygen ions are moved into the oxide by either floodgun electron bombardment or by thermal annealing. The former, if sufficientlyenergetic, results in locally well defined conduction band onsets at ~1 V,while the latter results in a progressively higher local conduction band onset,exceeding 2.3 V for 500 and 600 C thermal anneals

Tunneling spectroscopy studies of treated aluminum oxide tunnel barrier layers