English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition (MOCVD) on TiN porous network templates formed by in-situ thermal annealing of Ti in ammonia. The room temperature decay times obtained from biexponential fits to time- resolved photoluminescence data are longer than ever reported for GaN. The carrier lifetime of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 µm-thick high quality freestanding GaN. The linewidth of the asymmetric

Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates