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An abrupt first-order metal-insulator transition (MIT) without structuralphase transition is first observed by current-voltage measurements andmicro-Raman scattering experiments, when a DC electric field is applied to aMott insulator VO_2 based two-terminal device. An abrupt current jump ismeasured at a critical electric field. The Raman-shift frequency and thebandwidth of the most predominant Raman-active A_g mode, excited by theelectric field, do not change through the abrupt MIT, while, they, excited bytemperature, pronouncedly soften and damp (structural MIT), respectively. Thisstructural MIT is found to occur secondarily.Comment: 4 pages, 4 figure

Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices