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A series of wurtzite MgZnO quasi-ternary alloys, which consist of wurtzite MgO∕ZnO superlattices, were grown by molecular-beam epitaxy on sapphire substrates. By changing the thicknesses of ZnO layers and/or of MgO layers of the superlattice, the band-gap energy was artificially tuned from 3.30to4.65eV. The highest band gap, consequently realized by the quasi-ternary alloy, was larger than that of the single MgZnO layer, we have ever reported, keeping the wurtzite structure. The band gap of quasi-ternary alloys was well analyzed by the Kronig–Penny model supposing the effective masses of wurtzite MgO as 0.30m0 and (1–2)m0 for electrons and holes, respectively.

Fabrication of wide-band-gap MgxZn1−xO quasi-ternary alloys by molecular-beam epitaxy