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A multiple-tip ultra-high vacuum (UHV) scanning tunneling microscope (MT-STM)with a scanning electron microscope (SEM) for imaging and molecular-beamepitaxy growth capabilities has been developed. This instrument (nanoworkbench)is used to perform four-point probe conductivity measurements at micrometerspatial dimension. The system is composed of four chambers, the multiple-tipSTM/SEM chamber, a surface analysis and preparation chamber, a molecular-beamepitaxy chamber and a load-lock chamber for fast transfer of samples andprobes. The four chambers are interconnected by a unique transfer system basedon a sample box with integrated heating and temperature-measuring capabilities.We demonstrate the operation and the performance of the nanoworkbench with STMimaging on graphite and with four-point-probe conductivity measurements on asilicon-on-insulator (SOI) crystal. The creation of a local FET, whosedimension and localization are respectively determined by the spacing betweenthe probes and their position on the SOI surface, is demonstrated.Comment: 39 pages, 15 figure

Development and performance of the nanoworkbench: A four tip STM for conductivity measurements down to submicrometer scales