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We consider electron tunneling from a nonmagnetic $n$-type semiconductor($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottkybarrier resulting in efficient extraction of electron spin from a thin $n$-Slayer near FM-S interface at low spin polarization of the current. We show thatthis effect can be used for an efficient polarization radiation source in aheterostructure where the accumulated spin polarized electrons are injectedfrom $n$-S and recombine with holes in a quantum well. The radiationpolarization depends on a bias voltage applied to the FM-S junction.Comment: 4 pages, 2 figure

Efficient polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current