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Strongly enhanced lateral diffusion of photogenerated carriers was directly observed in the luminescent image of the InGaNGaN quantum wells. Such an effect was quantitatively modeled using diffusion equation and the ambipolar diffusion coefficient derived by K. H. Gulden and his co-workers [Phys. Rev. Lett. 66, 373 (1991)]. Our simulation shows that the vertical piezoelectric field existing in strained InGaNGaN quantum wells is the original "driving force" for the enhancement of lateral diffusion. Influence of the density of photogenerated carriers and their average mobility on the enhancement was discussed. © 2005 American Institute of Physics.published_or_final_versio

applied physics letters

Direct observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaN∕GaN quantum well structures