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Ion-beam-synthesized {sup 74}Ge nanocrystals embedded in an amorphous silica matrix exhibit large compressive stresses in the as-grown state. The compressive stress is determined quantitatively by evaluating the Raman line shift referenced to the line position of free-standing nanocrystals. Post-growth thermal treatments lead to stress reduction. The stress relief process is shown to be governed by the diffusive flux of matrix atoms away from the local nanocrystal growth region. A theoretical model that quantitatively describes this process is presented.

Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2