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Introducing an epitaxial growth technique called corner overgrowth, wefabricate a quantum confinement structure consisting of a high-mobilityGaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substratecorner. The resulting corner-junction quantum-well heterostructure effectivelybends a two-dimensional electron system (2DES) at an atomically sharp $90^{\rmo}$ angle. The high-mobility 2DES demonstrates fractional quantum Hall effecton both facets. Lossless edge-channel conduction over the corner confirms acontinuum of 2D electrons across the junction, consistent withSchroedinger-Poisson calculations of the electron distribution. This growthtechnique differs distinctly from cleaved-edge overgrowth and enables acomplementary class of new embedded quantum heterostructures.Comment: 3 pages, 4 figures, latest version accepted to AP

Corner overgrowth: Bending a high mobility two-dimensional electron system by 90°