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The general theory for quantum simulation of cubic semiconductor n-MOSFETs ispresented within the effective mass equation approach. The fullthree-dimensional transport problem is described in terms of coupled transversesubband modes which arise due to quantum confinement along the body thicknessdirection. Couplings among the subbands are generated for two reasons: due tospatial variations of the confinement potential along the transport direction,and due to non-alignment of the device coordinate system with the principalaxes of the constant energy conduction band ellipsoids. The problem simplifiesconsiderably if the electrostatic potential is separable along transport andconfinement directions, and further if the potential variations along thetransport direction are slow enough to prevent dipolar coupling (Zenertunneling) between subbands. In this limit, the transport problem can be solvedby employing two unitary operators to transform an arbitrarily orientedconstant energy ellipsoid into a regular ellipsoid with principal axes alongthe transport, width and confinement directions of the device. The effectivemasses for several technologically important wafer orientations for silicon andgermanium are calculated in this paper

Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers