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We report on observation of a light-induced switching of the conductance inthe back-gated organic field-effect transistors (OFETs) with built-inconduction channel. In the studied devices, the built-in channel is formedowing to the self-sensitized photo-oxidation of rubrene surface. In the dark,the back gate controls the charge injection from metal contacts into thebuilt-in channel: the high-current ON state corresponds to zero or negativeback-gate voltage; the low-current OFF state - to a positive back-gate voltagethat blocks the Schottky contacts. Illumination of the OFET in the OFF statewith a short pulse of light switches the device into the ON state that persistsin the dark for days. The OFF state can be restored by cycling the back gatevoltage. The observed effect can be explained by screening of the back-gateelectric field by the charges photo-generated in the bulk of organicsemiconductor.Comment: 3 page

Light-induced switching in back-gated organic transistors with built-in conduction channel