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The effect of tensile stress on magnetoimpedance (MI) in CoMnSiB amorphouswires at microwave frequencies (0.5-3 GHz) is investigated both experimentallyand theoretically. In the presence of the dc bias magnetic field of the orderof the anisotropy field, the impedance shows very large and sensitive changewhen the wire is subjected to a tensile stress: 100% and 60% per 180 MPa forfrequencies 500 MHz and 2.5 GHz, respectively. It is demonstrated that thisbehavior owes mainly to the directional change in the equilibrium magnetizationcaused by the applied stress and field, which agrees well with the theoreticalresults for the surface impedance. This stress effect on MI is proposed to usefor creating microwave stress-tunable composite materials containing shortmagnetic wires. The analysis of the dielectric response from such materialsshows that depending on the stress level in the material, the dispersion of theeffective permittivity can be of a resonant or relaxation type with aconsiderable change in its values (up to 100% at 600 MPa). This media can beused for structural stress monitoring by microwave contrast imaging

Stress effect on magnetoimpedance in amorphous wires at gigahertz frequencies and application to stress-tunable microwave composite materials