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We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlNthin films. The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 u_B/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive. While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activatedconduction that follows the exponential law expected for variable range hoppingbetween localized states. Hall measurements on a Cr-GaN sample indicate amobility of 0.06 cm^2/V.s, which falls in the range characteristic of hoppingconduction, and a free carrier density (1.4E20/cm^3), which is similar inmagnitude to the measured magnetically-active Cr concentration (4.9E19/cm^3). Alarge negative magnetoresistance is attributed to scattering from loose spinsassociated with non-ferromagnetic impurities. The results indicate thatferromagnetism in Cr-GaN and Cr-AlN can be attributed to the double exchangemechanism as a result of hopping between near-midgap substitutional Cr impuritybands.Comment: 14 pages, 4 figures, submitted to AP

Observation of ferromagnetism above 900K in Cr–GaN and Cr–AlN