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We have characterized the vertical transport properties of epitaxial layeredstructures composed of Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ (PCMO) sandwiched betweenSrRuO$_{3}$ (SRO) bottom electrode and several kinds of top electrodes such asSRO, Pt, Au, Ag, and Ti. Among the layered structures, Ti/PCMO/SRO is distinctdue to a rectifying current-voltage ($I$--$V$) characteristic with a largehysteresis. Corresponding to the hysteresis of the $I$--$V$ characteristics,the contact resistance of the Ti/PCMO interface reversibly switches between twostable states by applying pulsed voltage stress. We propose a model for theresistance switching at the Ti/PCMO interface, in which the width and/or heightof a Schottky-like barrier are altered by trapped charge carriers in theinterface states.Comment: 3 pages, 4 figures, Appl. Phys. Lett., in pres

Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface