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We demonstrate controllable shift of the threshold voltage and the turn-onvoltage in pentacene thin film transistors and rubrene single crystal fieldeffect transistors (FET) by the use of nine organosilanes with differentfunctional groups. Prior to depositing the organic semiconductors, theorganosilanes were applied to the SiO2 gate insulator from solution and form aself assembled monolayer (SAM). The observed shift of the transfercharacteristics range from -2 to 50 V and can be related to the surfacepotential of the layer next to the transistor channel. Concomitantly the mobilecharge carrier concentration at zero gate bias reaches up to 4*10^12/cm^2. Inthe single crystal FETs the measured transfer characteristics are also shifted,while essentially maintaining the high quality of the subthreshold swing. Theshift of the transfer characteristics is governed by the built-in electricfield of the SAM and can be explained using a simple energy level diagram. Inthe thin film devices, the subthreshold region is broadened, indicating thatthe SAM creates additional trap states, whose density is estimated to be oforder 1*10^12/cm^2.Comment: to be published in J. Appl. Phy

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator