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We present the results of GaInNAs∕GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ∼170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed. Lasing occurs via the ground state at ∼1.2μm, with threshold current density of 2.1kA∕cm2 and maximum output power of 16mW.

Room-temperature continuous-wave operation of GaInNAs∕GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy