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Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy(MBE) were used in order to study B surface segregation during growth and Blattice diffusion. Ge concentration and stress effects were separated. Analysisof B segregation during growth shows that: i) for layers in epitaxy on(100)Si), B segregation decreases with increasing Ge concentration, i.e. withincreased compressive stress, ii) for unstressed layers, B segregationincreases with Ge concentration, iii) at constant Ge concentration, Bsegregation increases for layers in tension and decreases for layers incompression. The contrasting behaviors observed as a function of Geconcentration in compressively stressed and unstressed layers can be explainedby an increase of the equilibrium segregation driving force induced by Geadditions and an increase of near-surface diffusion in compressively stressedlayers. Analysis of lattice diffusion shows that: i) in unstressed layers, Blattice diffusion coefficient decreases with increasing Ge concentration, ii)at constant Ge concentration, the diffusion coefficient of B decreases withcompressive biaxial stress and increases with tensile biaxial stress, iii) thevolume of activation of B diffusion () is positive for biaxial stress while itis negative in the case of hydrostatic pressure. This confirms that under abiaxial stress the activation volume is reduced to the relaxation volume

journal of applied physics

Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress