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Electrical conductivity of porous silicon fabricated form heavily dopedp-type silicon is very sensitive to NO$_2$, even at concentrations below 100ppb. However, sensitivity strongly depends on the porous microstructure. Thestructural difference between sensitive and insensitive samples isindependently confirmed by microscopy images and by light scattering behavior.A way to change the structure is by modifying the composition of theelectrochemical solution. We have found that best results are achieved usingethanoic solutions with HF concentration levels between 13% and 15%.Comment: 3 pages, 4 figures, package SIunits require

Role of microstructure in porous silicon gas sensors for NO2