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We proposed an in situ postdeposition ultraviolet treatment in an Ar ambient (UTA) to improve the p∕i interface of amorphous silicon based solar cell. We have increased the conversion efficiency by ∼16% by improving the built-in potential and reducing recombination at the p∕i interface. Through spectroscopic ellipsometry and Fourier-transform infrared measurements, it is concluded that the UTA process induces structural modification of the p-type hydrogenated amorphous silicon–carbide (p-a-SiC:H) window layer. An ultrathin p-a-SiC:H contamination layer formed during the UTA process acts as a buffer layer at the interface.

applied physics letters

<i>In situ</i> ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon–carbide windows of hydrogenated amorphous silicon based solar cells

In situ ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon–carbide windows of hydrogenated amorphous silicon based solar cells