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The ferrimagnetic resonance linewidth of silicon‐doped YIG, measured as a function of temperature at 13.4 kMHz, is found to show a pronounced peak at 105°C. The anisotropic behavior of this peak is in good agreement with the four‐level valence‐exchange model proposed by Clogston. The model yields for the electron ordering energy a value 5 × 10‐4 eV which agrees closely with the energy deduced from magnetic anneal studies. The activation energy for electron transfer (0.25 eV) is virtually identical with values reported in investigations of electrical conductivity and acoustic loss.

HIGH TEMPERATURE RESONANCE LOSSES IN SILICON-DOPED YTTRIUM—IRON GARNET (YIG)