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The effect of oxidation on charge transport and retention within a sheet of silicon (Si) nanocrystals was investigated with an electrostatic force microscope. Single layers of nanocrystals with smooth and abrupt Si/SiO2 interfaces were prepared by thermal crystallization of thin amorphous Si layers, followed by an oxidation treatment for isolating the nanocrystals. Controlled amounts of charge were injected into the nanocrystals and their in-plane diffusion was monitored in real time. Rapid transport of the injected charge occurred for the nonoxidized nanocrystals. Oxidation of the nanocrystal layer resulted in suppression of lateral transport. The nanocrystals oxidized for 30 min retained the injected charge in a well-defined, localized region with retention times of the order of several days. These long-term charge retention characteristics indicate that nanocrystals prepared by this process could be attractive candidates for nonvolatile memory applications.

Effect of oxidation on charge localization and transport in a single layer of silicon nanocrystals