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An approach of the depth profiling for the thin film synthesized with ion implantation was developed. The nc-Si depth distribution obtained from secondary ion mass spectroscopy measurement was modeled with the approximation of many sublayers. The optical constants of each sublayer were formulated with the nc-Si volume fraction in the sublayer, for a given wavelength. The nc-Si optical constants as variable based on the effective medium approximation. The optical constants of each sublayer were calculated. The depth profiles of the optical constants for the SiO 2 thin film containing the nc-Si were obtained.published_or_final_versio

Profile of optical constants of SiO2 thin films containing Si nanocrystals