English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

A silicidation process was developed to produce high-quality CoSi2 directly on SiO2, which can be used for metal gates of metal-oxide-semiconductor field-effect transistors (MOSFETs). Normally, the formation of a CoSi2 layer on SiO2 is very difficult because of the requirement for an exact Co/Si thickness ratio. In our process, an additional Si layer was deposited after the first rapid thermal processing (RTP) at 500 degreesC and selective etching of the unreacted Co. The additional Si layer provided a Si supply for the second RTP at a higher temperature. This method allows the Co layer thickness to be varied over a fairly large range, and in addition, the microstructure of the silicide layer and the CoSi2/SiO2 interface were substantially improved. (C) 2004 American Institute of Physics

Full silicidation process for making CoSi2 on SiO2