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Thin films of Co2MnSi have been grown on a-plane sapphire substrates fromthree elemental targets by dc magnetron co-sputtering. These films are singlephase, have a strong (110) texture and a saturation magnetization of 4.95uB/formula unit at 10 K. Films grown at the highest substrate temperature of715 K showed the lowest resistivity (47 uOhm cm at 4.2 K) and the lowestcoercivity (18 Oe). The spin polarization of the transport current was found tobe of the order of 54% as determined by point contact Andreev reflectionspectroscopy. A decrease in saturation magnetization with decreasing filmthickness and different transport behaviour in thinner films indicate a gradeddisorder in these films grown on non-lattice matched substrates.Comment: 15 pages, 4 figure

Structural, magnetic, and transport properties of thin films of the Heusler alloy Co2MnSi