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We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin filmson GaAs(001), describe the structural and transport properties, and compare themeasured magnetic properties with those predicted by theory. The samples arestrongly p-type, and hole densities increase with Cr concentration. TheCryGe1-y system remains paramagnetic for the growth conditions and low Crconcentrations employed (y < 0.04), consistent with density functional theorypredictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1-x hostsystematically reduces the Curie temperature and total magnetization.Comment: 4 pages, 4 figures, submitted to Applied Physics Letter

Epitaxial growth of the diluted magnetic semiconductors CryGe1−y and CryMnxGe1−x−y