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We report on the growth of GaN quantum dots and the control of their density in the Stranski–Krastanov mode on AlN (0001) by rf-plasma molecular beam epitaxy at 750 °C. After depositing the equivalent of 2–3 ML GaN coverage, as limited by N fluence under Ga-droplet growth conditions, excess Ga was desorbed and Stranski–Krastanov islands formed under vacuum. We present the dependence of island density as a function of GaN coverage (for two growth rates: 0.10 and 0.23 ML/s), as estimated from atomic force microscopy and cross-sectional transmission electron microscopy. With a GaN growth rate of 0.23 ML/s, the island density was found to vary from less than 3.0×108–9.2×1010 cm−2 as the GaN coverage was varied from 2.2 (critical thickness) to 3.0 ML. For a GaN growth rate of 0.10 ML/s, the island density varied from 2.0×1010 to 7.0×1010 cm−2 over a GaN coverage range of 2.0–3.0 ML. For each growth rate, the GaN islands were found to be of nearly uniform size, independent of the quantum dot density.

GaN quantum dot density control by rf-plasma molecular beam epitaxy