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Crystallization of amorphous Ge2Sb2Te5 films (10, 40, and 70 nm thick) was studied by in situ heating in a transmission electron microscope (TEM). Electron irradiation-induced crystallization is possible at room temperature using a 400 kV electron beam where the reciprocal of the incubation time for crystallization scales linearly with the current density during electron irradiation. Without electron-beam exposure, crystallization starts at 130 degreesC. Using a 200 kV beam, crystallization also occurred in the temperature interval between 70 and 130 degreesC. In principle, electron irradiation always affects the crystallization kinetics, strongly promoting nucleation and probably not hampering growth. At 130 degreesC without electron-beam exposure, 400 nm diameter colonies of 10-20 nm grains develop in the 40 and 70 nm thick films showing clear symmetric bending contour contrast. These spherulites prefer to have in their center the zone axis of the Fm (3) over barm structure perpendicular to the surface of the film and show a typical tilt variation of +/-10degrees. At 340 degreesC, the transition from the metastable to the stable trigonal (P (3) over bar m1) crystal structure takes place. Fast and excessive grain growth occurs with the [0001] axis perpendicular to the film surface of the film. Also shown is that oxidation of the Ge2Sb2Te5 film strongly influences its crystallization; its critical temperature decreases from 130 to 35 degreesC. (C) 2004 American Institute of Physics

In situ transmission electron microscopy study of the crystallization of Ge2Sb2Te5