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We demonstrate the use of a piezoelectric actuator to apply, at lowtemperatures, uniaxial stress in the plane of a two-dimensional electron systemconfined to a modulation-doped AlAs quantum well. Via the application ofstress, which can be tuned in situ and continuously, we control the energiesand occupations of the conduction-band minima and the electronic properties ofthe electron system. We also report measurements of the longitudinal andtransverse strain versus bias for the actuator at 300, 77, and 4.2 K. Apronounced hysteresis is observed at 300 and 77 K, while at 4.2 K, strain isnearly linear and shows very little hysteresis with the applied bias.Comment: 2 figure

Low-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator