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Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)Asepilayers was carried out using high resolution X-ray diffraction (XRD)measurements for a wide range of Mn concentrations (0.027<=x<=0.083), withspecial attention on how the interstitial Mn atoms (Mn_I) influence the latticeparameter of this material. We observe a distinct decrease of the latticeparameter after low temperature annealing of Ga(1-x)Mn(x)As, which is known toreduce the Mn_I concentration. The reciprocal space maps measured for all theinvestigated samples showed that the Ga(1-x)Mn(x)As layers are fully strained -i.e., they remain pseudomorphic to the GaAs (001) substrate - for the entirethickness of the samples used (in the present case over 100 nm). In all casesstudied the XRD measurements revealed high crystalline perfection of bothas-grown as well as annealed Ga(1-x)Mn(x)As epilayersComment: 26 page

Effect of Mn interstitials on the lattice parameter of Ga1−xMnxAs