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Spectroscopic ellipsometry (SE) is used in study GaN lms during growth by metal-organic vapor phase epitaxy (MOVPE) and correlation to well known results of plasma-assisted molecular beam epitaxy (PAMBE). Results for the PAMBE reveal clear dierences between growth under Ga-rich and N-rich conditions, which are attributed to the presence of a Ga-bilayer on the surface (also seen with low energy electron-diracti on) in the former case. Results for MOVPE surfaces during growth or for surfaces which are stabilized under NH3 are very similar to the N-rich PAMBE result. It is concluded that under normal growth conditions in MOVPE the surface is not terminated by a Ga-bilayer.

Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry