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Epitaxial (001)-, (118)-, and (104)-oriented Nd-doped Bi4Ti3O12 films havebeen grown by pulsed-laser deposition from a Bi4-xNdxTi3O12 (x=0.85) target onSrRuO3 coated single-crystal (100)-, (110)-, and (111)-oriented SrTiO3substrates, respectively. X-ray diffraction illustrated a unique epitaxialrelationship between film and substrate for all orientations. We observed astrong dependence of ferroelectric properties on the film orientation, with noferroelectric activity in an (001)-oriented film; a remanent polarization, 2Pr,of 12 microC/cm2 and coercive field, Ec, of 120 kV/cm in a (118)-oriented film;and 2Pr = 40 microC/cm2, Ec = 50 kV/cm in a (104)-oriented film. The lack offerroelectric activity along the c-axis is consistent with the orthorhombicnature of the crystal structure of the bulk material, as determined by powderneutron diffraction.Comment: 14 Pages, 3 Figures, Accepted by Applied Physics Letter

Orientation dependence of ferroelectric properties of pulsed-laser-ablated Bi4−xNdxTi3O12 films