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GaN grown directly on 4H-SiC substrates by metallorganic molecular-beam epitaxy is investigatedin terms of nucleation, coalescence, and growth front evolution. The effects of SiC surfaceconfigurations such as step and terrace structures on GaN film growth physics are examined indetail. Comparative studies using on-axis and vicinal SiC surfaces indicate distinguishabledifferences in structural and morphological characteristics. An anisotropic x-ray characteristic isobserved for the GaN film deposited on the vicinal stepped SiC surfaces. This is due to preferentialnucleation and coalescence of GaN islands along step edges, which are induced by the confinementof adatoms on the narrow terraces on the vicinal SiC surface

Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy