English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We have employed admittance spectroscopy and deep-level transientspectroscopy in order to investigate the electronic properties ofZnO/CdS/Cu(In,Ga)(S,Se)$_2$ heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottkycontacts. Our work concentrates on the origin of an energy-distributed defectstate commonly found in these systems. The activation energy of the defectstate addressed continuously shifts upon air annealing or damp-heat treatmentand is a valuable measure of the degree of band bending inCu(In,Ga)(S,Se)$_2$-based junctions. We demonstrate that the band bendingwithin the Cu(In,Ga)(S,Se)$_2$ layer, reported in the literature to becomeminimal after air exposure, returns after the formation of either a Schottkycontact or a heterojunction. The earlier phenomenon turns out to be independentof a surface passivation due to the CdS bath deposition.

Band Bending Independent of Surface Passivation in ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ Heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky Contacts